? semiconductor components industries, llc, 2014 february, 2014 ? rev. 7 1 publication order number: msr1560/d msr1560g, MSRF1560G switch-mode soft recovery power rectifier these state ? of ? the ? art devices are designed for boost converter or hard ? switched converter applications, especially for power factor correction application. it could also be used as a free wheeling diode in variable speed motor control applications and switching mode power supplies. features ? soft recovery with low reverse recovery charge (q rr ) and peak reverse recovery current (i rrm ) ? epoxy meets ul 94 v ? 0 @ 0.125 in ? low forward voltage ? low leakage current ? high temperature glass passivated junction ? these are pb ? free devices mechanical characteristics: ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 600 v average rectified forward current (at rated v r , t c = 125 c) i o 15 a peak repetitive forward current (at rated v r , square wave, 20 khz,t c = 125 c) i frm 30 a non ? repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 100 a operating junction and storage temperature range t j , t stg ? 65 to +150 c thermal characteristics parameter symbol value unit msr1560g: thermal resistance junction ? to ? case junction ? to ? ambient r jc r ja 1.6 72.8 c/w MSRF1560G: thermal resistance junction ? to ? case junction ? to ? ambient r jc r ja 4.25 75 c/w stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. soft recovery power rectifier 15 amperes, 600 volts 1 4 3 device package shipping ordering information msr1560g to ? 220ac (pb ? free) 50 units/rail http://onsemi.com to ? 220ac case 221b style 1 3 4 1 marking diagrams a = assembly location y = year ww = work week g = pb ? free package ka = diode polarity ay wwg msr1560 ka to ? 220 fullpak case 221ag style 1 MSRF1560G to ? 220fp (pb ? free) 50 units/rail aywwg msrf1560 ka 3 4 1
msr1560g, MSRF1560G http://onsemi.com 2 electrical characteristics characteristic symbol value unit instantaneous forward voltage (note 1) (i f = 15 a) maximum typical v f t j = 25 c t j = 150 c v 1.8 1.5 1.4 1.2 instantaneous reverse current (v r = 600 v) maximum typical i r t j = 25 c t j = 150 c a 15 0.4 5000 100 reverse recovery time (note 2) (v r = 30 v, i f = 1 a, di/dt = 100 a/ s) maximum typical t rr t j = 25 c t j = 100 c ns 45 35 65 54 typical recovery softness factor (v r = 30 v, i f = 1 a, di/dt = 100 a/ s) s = t b /t a 0.67 0.74 typical peak reverse recovery current (v r = 30 v, i f = 1 a, di/dt = 100 a/ s) i rrm 2.3 3.2 a typical reverse recovery charge (v r = 30 v, i f = 1 a, di/dt = 100 a/ s) q rr 31 78 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width 380 s, duty cycle 2% 2. t rr measured projecting from 25% of i rrm to zero current 0.3 100 10 1 0.1 1.9 1.5 1.1 0.7 2.3 2.7 figure 1. maximum forward voltage v f , intantaneous voltage (volts) i f , instantaneous forward current (amps) v f @ 25 c v f @ 100 c v f @ 150 c figure 2. typical forward voltage v f , instantaneous forward current (amps) i f , instantaneous forward current (amps) 0.3 1.1 0.9 0.7 0.5 1.3 1.5 1.7 1.9 2.1 100 10 1 0.1 zl v f @ 25 c v f @ 100 c v f @ 150 c
msr1560g, MSRF1560G http://onsemi.com 3 0.001 0.01 0.1 1 10 100 1000 v r, reverse voltage (volts) i r, reverse current ( a) 0 400 300 200 500 100 600 i r @ 25 c i r @ 150 c i r @ 100 c 10 figure 3. maximum reverse current v r , reverse voltage (volts) i r , reverse current ( a) 0 400 500 300 200 600 100 0.1 100 1 1000 10000 figure 4. typical reverse current i r @ 25 c i r @ 100 c i r @ 150 c 20 10 0 30 5 20 100 0 15 50 0 150 t c , case temperature ( c) i f(av) , average forward 10 i f(av) , average forward current (amps) figure 5. current derating figure 6. power dissipation p f(av) , average power dissipation (watts) 25 200 0 10 20 dc square wave dc square wave 350 300 250 200 150 100 50 0 400 350 20 300 250 30 10 040 v r , reverse voltage (volts) c, capacitance (pf) 200 150 100 50 0 v r , reverse voltage (volts) figure 7. maximum capacitance figure 8. typical capacitance c, capacitance (pf) 50 0 40 50 30 20 10 t j = 25 c t j = 25 c t j = 150 c t j = 150 c
msr1560g, MSRF1560G http://onsemi.com 4 60 50 40 30 20 10 0 80 60 40 20 0 figure 9. typical trr vs. di/dt di/dt (a/ s) figure 10. typical trr vs. temperature temperature ( c) time (nsec) time (nsec) 250 175 100 25 75 125 25 175 t rr vs. di/dt @ 25 c t a vs. di/dt @ 25 c t b vs. di/dt @ 25 c t rr t a t b 3 2 1 0 50 40 30 20 figure 11. typical peak reverse recovery current di/dt (a/ s) figure 12. typical reverse recovery charge di f /dt (a/ s)) i rrm , peak recovery current (amps) q rr , reverse recovery charge (nc) i f = 1 a 25 225 175 125 75 25 250 175 100 35 25 45 55 65 di f /dt (a/ s) e off , switching off losses ( j) figure 13. typical switching off losses 25 175 100 250 i f = 1 a i f = 1 a t j = 25 c t j = 25 c v r = 30 v
msr1560g, MSRF1560G http://onsemi.com 5 1 0.1 10 figure 14. transient thermal response t, time (s) r(t), transient thermal resistance 0.0001 0.01 0.001 0.1 1 10 id = 0.5 0.1 0.05 0.01 single pulse figure 15. thermal response, (msrf1560) junction ? to ? case (r jc ) t, time (s) 0.1 10 0.001 1.0 10 100 1000 0.1 0.000001 z jc (t) = r(t) r jc r jc = 1.6 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 r(t), transient thermal response (normalized) ( c/w)
msr1560g, MSRF1560G http://onsemi.com 6 figure 16. thermal response, (msrf1560) junction ? to ? ambient (r ja ) t, time (s) 0.1 100 0.001 1.0 10 100 1000 0.1 0.000001 z jc (t) = r(t) r jc r jc = 1.6 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 r(t), transient thermal response (normalized) ( c/w) 10
msr1560g, MSRF1560G http://onsemi.com 7 package dimensions to ? 220 two ? lead case 221b ? 04 issue f style 1: pin 1. cathode 2. n/a 3. anode 4. cathode b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.039 0.64 1.00 f 0.142 0.161 3.61 4.09 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f to ? 220 fullpak, 2 ? lead case 221ag issue a style 1: pin 1. cathode 2. n/a 3. anode dim min max millimeters d 14.22 15.88 e 9.65 10.67 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.80 c 0.49 0.79 l 12.70 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.90 a1 2.50 2.90 h1 5.97 6.48 e q l1 b2 e d l p 123 4 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3 e1 5.08 bsc e1 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 msr1560/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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